Over the last decade, roll-to-roll (R2R) printing has been pursued with the expectation of developing a commercially viable, high throughput technology to manufacture flexible, disposable and inexpensive printed electronics. However, in recent years, pessimism has emerged due to the barriers faced when attempting to fabricate and integrate thin film transistors (TFT) using R2R printing. In this presentation, we will report for the first time, 11 × 11, 20 × 20 and 40 × 40 TFT based active matrix backplanes with 9.3 dpi (dots per inch) resolution obtained using a fully R2R gravure printingprocess.Using single walled carbon nanotubes(SWCNT) as the semiconducting layer and poly(ethylene terephthalate) (PET) as the substrate we obtained a 99 % device yield and extracted the scalability factors needed for afeasible manufacturingprocess.  Smart sensor arraysor digital paper (signage)can be obtained bylaminating a pressure sensitive rubberor e-paper sheet to the TFT backplane. The R2R gravure printingprocess we have developed addresses several barriers in the fabrication and integration of printed TFTs, circumventing or surmounting challenges associated with the alignment ofsource-drain and gate electrodes, threshold voltage (Vth) shift, and overall device yield, proving that R2R printing is indeed a viable advanced manufacturing technology that can enable high throughput production of flexible, disposable and cutting edgeprinted electronics.